Plasma anodization of evaporated Al-InP systems

Y. Hirayama, H. M. Park, F. Koshiga, T. Sugano

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A12O3 film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 1010 - 1012Ω cm for the anodic Al2O3 and the minimum density of the interface trap states of 4 × 1011 cm-2 ev-1 for Al2 O3 -InP systems were obtained.

本文言語English
ページ(範囲)1011-1022
ページ数12
ジャーナルJournal of Electronic Materials
11
6
DOI
出版ステータスPublished - 1982 11月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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