Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Liang Jianbo, Naoteru Shigekawa

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.

本文言語English
ホスト出版物のタイトルProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ4
ページ数1
ISBN(電子版)9784904743034
DOI
出版ステータスPublished - 2017 6 13
イベント5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
継続期間: 2017 5 162017 5 18

出版物シリーズ

名前Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
国/地域Japan
CityTokyo
Period17/5/1617/5/18

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料
  • 表面、皮膜および薄膜

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