TY - JOUR
T1 - Piezoelectric performance and domain structure of epitaxial PbTiO 3 thin film deposited by hydrothermal method
AU - Morita, Takeshi
AU - Cho, Yasuo
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006/5/25
Y1 - 2006/5/25
N2 - The hydrothermal method enables the high quality epitaxial PbTiO 3 deposition at 150°C and we have already reported on the ferroelectric properties of an about 100-nm-thick PbTiO3 film. In this study, the piezoelectric properties of a 430-nm-thick PbTiOj epitaxial film were examined. The domain structure was composed of predominantly the +c-domain and a small amount of the a-domain. The DE hysteresis curve and piezoelectric strain were asymmetrical because the initial domain structure was stable and difficult to reverse perfectly with an external electric field. The strain has an excellent linearity, and d33effec coefficient was found to be 97 pC/N, which is larger than the predicted value. The large-piezoelectric performance and excellent linearity are suitable for ultrasonic transducers applications.
AB - The hydrothermal method enables the high quality epitaxial PbTiO 3 deposition at 150°C and we have already reported on the ferroelectric properties of an about 100-nm-thick PbTiO3 film. In this study, the piezoelectric properties of a 430-nm-thick PbTiOj epitaxial film were examined. The domain structure was composed of predominantly the +c-domain and a small amount of the a-domain. The DE hysteresis curve and piezoelectric strain were asymmetrical because the initial domain structure was stable and difficult to reverse perfectly with an external electric field. The strain has an excellent linearity, and d33effec coefficient was found to be 97 pC/N, which is larger than the predicted value. The large-piezoelectric performance and excellent linearity are suitable for ultrasonic transducers applications.
KW - Epitaxial thin film
KW - Hydrothermal method
KW - Lead titanate
KW - Piezoelectronic material
KW - Ultrasonic transducer
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U2 - 10.1143/JJAP.45.4489
DO - 10.1143/JJAP.45.4489
M3 - Article
AN - SCOPUS:33744493950
VL - 45
SP - 4489
EP - 4492
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 B
ER -