Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film

L. V. Minh, M. Hara, H. Kuwano, T. Yokoyama, T. Nishihara, M. Ueda

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g-2.cm-3. This achievement was 1.5-fold increase compared to state of the art.

本文言語English
論文番号7051154
ページ(範囲)1094-1097
ページ数4
ジャーナルProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
2015-February
February
DOI
出版ステータスPublished - 2015 2 26
イベント2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 - Estoril, Portugal
継続期間: 2015 1 182015 1 22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 機械工学
  • 電子工学および電気工学

フィンガープリント

「Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル