Piezoelectric field and its influence on the pressure behavior of the light emission from InGaN/GaN and GaN/AlGaN quantum wells

T. Suski, P. Perlin, S. P. Lepkowski, H. Teisseyre, I. Gorczyca, P. Prystawko, M. Leszczynski, N. Grandjean, J. Massies, T. Kitamura, Y. Ishida, S. F. Chichibu, H. Okumura

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In this paper we review studies aiming at elucidation of the mechanisms responsible for anomalously low pressure coefficients of the light emission energy, dEE/dP, observed in quantum structures of InGaN/GaN and GaN/AlGaN. We have established that in hexagonal InGaN/GaN and GaN/AlGaN structures the main mechanism involved is related to the pressure induced increase of the piezoelectric field which determines also the strong red shift of the emission energy with thickness of the quantum well. To reproduce the experimental findings in InGaN/GaN case, it is necessary to take into account the dependence of the piezoelectric constants on the volume-conserving strain. Whereas the experimental results on a decrease of dEE/dP in GaN/AlGaN structures can be fully accounted for within the linear elasticity theory. In contrast to these findings, dEE/dP magnitude measured in cubic InGaN/GaN quantum structures shows value close to changes of the InGaN bandgap with pressure obtained from first principle calculations. The latter result is consistent with the absence of the built-in electric fields in the cubic nitride structures.

本文言語English
ページ(範囲)487-499
ページ数13
ジャーナルMaterials Research Society Symposium - Proceedings
693
出版ステータスPublished - 2002 1 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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