Physics in designing desirable ReRAM stack structure - Atomistic recipes based on oxygen chemical potential control and charge injection/removal

K. Kamiya, M. Y. Yang, B. Magyari-Kope, M. Niwa, Y. Nishi, K. Shiraishi

研究成果: Conference contribution

18 被引用数 (Scopus)

抄録

We clarify the importance of three-layers ReRAM stack-structures and provide guidelines for further optimization by both charge injection/removal and oxygen chemical potential. We determine atomistic structures corresponding to the ON-OFF switching process of ReRAMs using ab initio calculations. The cohesion-isolation of oxygen vacancies is found to be a strong driving force in the ON-OFF switching observed in oxide-based ReRAMs, and this phase transition can be controlled by injecting/removing charges while altering the oxygen chemical potential. Based on this concept, we propose universal guidelines for designing desirable ReRAM stack structures by introducing an oxygen vacancy barrier layer.

本文言語English
ホスト出版物のタイトル2012 IEEE International Electron Devices Meeting, IEDM 2012
DOI
出版ステータスPublished - 2012 12月 1
外部発表はい
イベント2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
継続期間: 2012 12月 102012 12月 13

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
国/地域United States
CitySan Francisco, CA
Period12/12/1012/12/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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