@inproceedings{d8ea4b91a5114f5cb1bca71c8ca9872b,
title = "Physical origins of ON-OFF switching in ReRAM via VO based conducting channels",
abstract = "We study the ON-OFF switching mechanism of ReRAM via oxygen vacancy (V O) based conducting channels using first-principles calculations. We find cohesion-dispersion transition of VO upon carrier injection and removal is a strong driving force in the ON-OFF switching in binary-oxide-based ReRAMs. The physical origins of the transition is the formation of bonding-like hybridized orbitals of VO defect levels, whose occupation can be controlled by changing system Fermi level by applying a voltage.",
keywords = "density functional theory, resistive-random-access-memories",
author = "Katsumasa Kamiya and Yang, {Moon Young} and Park, {Seong Geon} and Blanka Magyari-K{\"o}pe and Yoshio Nishi and Masaaki Niwa and Kenji Shiraishi",
year = "2013",
month = jan,
day = "1",
doi = "10.1063/1.4848260",
language = "English",
isbn = "9780735411944",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
pages = "11--12",
booktitle = "Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012",
note = "31st International Conference on the Physics of Semiconductors, ICPS 2012 ; Conference date: 29-07-2012 Through 03-08-2012",
}