Photostimulated luminescence properties of BaFBr:Eu under ion irradiation

The photostimulated luminescence (PSL) properties of the phosphor BaFBr:Eu after ion beam irradiation was analyzed; in particular, the PSL intensity dependent on ion fluence. The PSL intensity increased linearly with the ion fluence up to 10¹² ions/cm², and subsequently decreased gradually. The ion fluence dependence was observed to be similar among samples containing different F centers or different Eu concentrations. The fluence dependence was quantitatively analyzed based on a trapping model, in which competition between the trapping processes to storage centers and radiation defects is assumed; the model explained the experimental data quantitatively. The results indicate that radiation defects influence the PSL properties via the trapping of photostimulated electrons.