Photoreflectance of Cu-based I-III-VI2 heteroepitaxial layers grown by metalorganic chemical vapor deposition

Sho Shirakata, Shigefusa Chichibu

研究成果: Article査読

43 被引用数 (Scopus)

抄録

Photoreflectance (PR) spectroscopy has been developed as a powerful technique for the characterization of the heteroepitaxial layer of the Cu-III-VI2 semiconductors having the chalcopyrite structure. PR measurements have been carried out in the energy region near the fundamental absorption edge at 77 K for the heteroepitaxial layers of CuAlSe2, CuGaSe2, CuGaS2, and CuAlS2 grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition. Crystal quality, stress, and the crystallographic orientation have been well characterized, based on the analysis of the PR spectra in terms of transition energy, intensity, and broadening parameter.

本文言語English
ページ(範囲)2043-2054
ページ数12
ジャーナルJournal of Applied Physics
79
4
DOI
出版ステータスPublished - 1996 2 15
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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