Photoquantum Hall Effect and Light-Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures

Mahabub A. Bhuiyan, Zakhar R. Kudrynskyi, Debarati Mazumder, Jake D.G. Greener, Oleg Makarovsky, Christopher J. Mellor, Evgeny E. Vdovin, Benjamin A. Piot, Inna I. Lobanova, Zakhar D. Kovalyuk, Marina Nazarova, Artem Mishchenko, Kostya S. Novoselov, Yang Cao, Laurence Eaves, Go Yusa, Amalia Patanè

研究成果: Article査読

13 被引用数 (Scopus)

抄録

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Among van der Waals semiconductors, an exciting and rapidly growing development involves the “post-transition” metal chalcogenide InSe. Here, field effect phototransistors are reported where single layer graphene is capped with n-type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. It is shown that the light-induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate-controllable and only weakly dependent on temperature. The charge transfer at the InSe/graphene interface is probed by Hall effect and photoconductivity measurmentes and it is demonstrated that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light-induced charge transfer in gate-tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.

本文言語English
論文番号1805491
ジャーナルAdvanced Functional Materials
29
3
DOI
出版ステータスPublished - 2019 1 17

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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