Photon-stimulated desorption study of a SiO, film surface

M. Niwano, Y. Takakuwa, H. Katakura, N. Miyamoto

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Photon-stimulated desorption (PSD) experiments on thermal oxide films on Si have been performed using synchrotron radiation with photon energies in the Si 2p core-level excitation region, to investigate the chemical nature of the film surface. Mass analysis of the PSD ions is performed using a time-of-flight technique. H + is found to be the dominant ion species that desorbs from the film surface. It is observed that the H +PSD ion yield decreases exponentially with increasing the irradiation time of incident photons. The H +PSD ion yield as a function of photon energy exhibits a close similarity in spectral shape to the photoabsorption spectrum of SiO2. The present experimental results confirm us that hydrogen atoms exists on the outermost layer of SiO2 film, and provide direct evidence for Si-OH and Si-H termination of SiO2 films.

本文言語English
ページ(範囲)212-216
ページ数5
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
9
2
DOI
出版ステータスPublished - 1991 3 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Photon-stimulated desorption study of a SiO, film surface」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル