Experimental results are presented on the synchrotron-radiation-induced desorption of oxygen ions from HF-treated Si surfaces measured with a quadrupole mass analyzer operated in the pulse-counting mode. The effect of atomic hydrogen exposure was studied. Desorption of H+, O+ and F+ ions was observed from HF-treated Si surfaces. The yield of O+ ions was increased more than 30-fold by exposure to atomic hydrogen.
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