Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes

研究成果: Conference contribution

抄録

GaN is one of the promising candidates for the use in high-power electronic devices 1) operating at high frequencies, and normally-off GaN-based transistors on freestanding (FS) GaN substrates with low specific on-state resistances (~1.0 mΩ•cm 2) and high off-state breakdown voltage (>1.7 kV) have been demonstrated. 2-4) One of the challenging issues for producing such devices at low cost is the control of conductivity type and conductivity at designated segments using an ion-implantation (I/I) technique. Especially, p-type doping by Mg-I/I has been difficult 5-8) because donor-type defects introduced by I/I and/or donor impurities such as O or Si diffused from the protective overlayer during post-implantation annealing (PIA) 7) likely compensate holes.

本文言語English
ホスト出版物のタイトル19th International Workshop on Junction Technology, IWJT 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9784863487277
DOI
出版ステータスPublished - 2019 6
イベント19th International Workshop on Junction Technology, IWJT 2019 - Kyoto, Japan
継続期間: 2019 6 62019 6 7

出版物シリーズ

名前19th International Workshop on Junction Technology, IWJT 2019

Conference

Conference19th International Workshop on Junction Technology, IWJT 2019
CountryJapan
CityKyoto
Period19/6/619/6/7

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

フィンガープリント 「Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル