Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

Physics

• Photoluminescence 100%
• Indium 75%
• Metalorganic Vapor Phase Epitaxy 50%
• Emission 50%
• Growth 50%
• High Temperature 50%
• Nitrogen 25%
• Single Crystals 25%
• Flow Velocity 25%
• Pressure 25%
• Plane 25%

Engineering

• Band Edge 50%
• High Temperature 50%
• Flow Rate 25%
• Mole Fraction 25%
• Sapphire Substrate 25%
• Crystalline Quality 25%

Material Science

• Liquid Films 50%
• Single Crystal 25%