抄録
InGaN single-crystal films were grown on (0001) plane sapphire substrates at 800 °C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near-band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near-band edge emission on the indium mole fraction of InGaN has been investigated.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2251-2253 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 59 |
| 号 | 18 |
| DOI | |
| 出版ステータス | Published - 1991 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）