Photoluminescence of high-density and sub-20-nm GaAs nanodisks fabricated with a neutral beam etching process and MOVPE regrowth for high performance QDs devices

Yosuke Tamura, Akio Higo, Takayuki Kiba, Wang Yunpeng, Makoto Igarashi, Cedric Thomas, Weiguo Hu, Mohd Erman Fauzi, Akihiro Murayama, Masakazu Sugiyama, Yoshiaki Nakano, Seiji Samukawa

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

III-V compound semiconductor quantum dots photonic devices are very attractive because of their low power consumption, temperature stability, and high-speed modulation. We studied and developed a defect-free top-down fabrication process for sub-20-nm GaAs nanodisks (NDs) that uses bio-template and neutral beam etching. We successfully fabricated 100-nm-high nanopillars embedding 4- and 8-nm-thick GaAs quantum well and 30-nm-thick Al 0.3Ga0.7As barrier-stacked structures. The nanopillars were mounted by metalorganic vapor phase epitaxy. We measured visible light photoluminescence at a low temperature originating from the GaAs NDs. Nanodisks fabricated by the top-down process have a great potential for use in high-performance III-V photonic devices.

本文言語English
ホスト出版物のタイトル2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
ページ872-875
ページ数4
DOI
出版ステータスPublished - 2013
イベント2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
継続期間: 2013 8 52013 8 8

出版物シリーズ

名前Proceedings of the IEEE Conference on Nanotechnology
ISSN(印刷版)1944-9399
ISSN(電子版)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
国/地域China
CityBeijing
Period13/8/513/8/8

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 電子工学および電気工学
  • 材料化学
  • 凝縮系物理学

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