Photoluminescence of heavily doped GaAs/AlGaAs quantum wells in high magnetic fields

J. R. Anderson, M. Górska, J. Y. Jen, Y. Oka, I. Mogi, C. E.C. Wood

研究成果: Article査読

抄録

We studied the photoluminescence in GaAs/AlGaAs single quantum wells at fields up to a maximum of 22 T and observed spectra due to impurities, heavy-hole excitons, and Landau levels. The wells were doped with Si at different doping levels up to 3 x 1018 cm-3 in order to examine this influence on the photoluminescence. We compare results from two well widths, 50 Å and 100 Å. over an energy range from about 1.4 to 1.7 eV. From the dependence on field of the Landau levels, a cyclotron mass ratio of 0.11 ± 0.02 was determined, which is larger than the bulk GaAs mass ratio of 0.067. The heavy-hole exciton binding energy was about 15 meV for the 100 Å well.

本文言語English
ページ(範囲)184-188
ページ数5
ジャーナルMaterials Science and Engineering A
217-218
DOI
出版ステータスPublished - 1996 10 30

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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