Erbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+O2 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μm. The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤0.5 nm at 20 K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1996 1 1|
|イベント||Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA|
継続期間: 1996 4 8 → 1996 4 12
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