Photoluminescence of erbium-diffused silicon

H. Horiguchi, T. Kinone, R. Saito, T. Kimura, T. Ikoma

研究成果: Conference article査読

抄録

Erbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+O2 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μm. The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤0.5 nm at 20 K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

本文言語English
ページ(範囲)81-86
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
422
DOI
出版ステータスPublished - 1996 1 1
外部発表はい
イベントProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
継続期間: 1996 4 81996 4 12

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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