Photoinduced doping effect of pentacene field effect transistor in oxygen atmosphere studied by displacement current measurement

Satoshi Ogawa, Tatsuo Naijo, Yasuo Kimura, Hisao Ishii, Michio Niwano

研究成果: Article査読

90 被引用数 (Scopus)

抄録

It is widely accepted that atmospheric oxygen can work as an electron-accepting dopant mainly to p-type organic semiconductors. We have examined the effect of oxygen on a pentacene field effect transistor (FET) with and without exposure to light using the displacement current measurement. Under vacuum conditions, the change in the displacement current due to hole injection from the source and drain electrodes to the pentacene layer is clearly observed, suggesting that the origin of the mobile carriers in the pentacene FET is carrier injection. When the FET is exposed to oxygen under dark conditions, a very small change in the threshold gate voltage for hole injection is observed. In contrast, with exposure to both oxygen and light, we observed that the threshold voltage is lowered and shifted across the zero bias and even to the polarity against hole injection. This photoinduced doping effect induces a distinct increase in the drain current of the FET, and it is maintained for at least several hours even after the irradiation is turned off. This finding suggests that the performance of organic semiconductor devices is affected not only by atmospheric oxygen but also by ambient light even during the processing and storage of the devices.

本文言語English
論文番号252104
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
25
DOI
出版ステータスPublished - 2005
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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