@article{8e5255f2b2304214a4a647fc42075e7e,
title = "Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy",
abstract = "We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.",
author = "T. Tanimura and S. Toyoda and H. Kamada and H. Kumigashira and M. Oshima and T. Sukegawa and Liu, {G. L.} and Z. Liu",
note = "Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc., (Selete) for providing the high- k gate dielectric samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC). The synchrotron-radiation photoemission measurements were performed under the project 08S2-003 at the Institute of Materials Structure Science at KEK. ",
year = "2010",
month = apr,
day = "19",
doi = "10.1063/1.3409162",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",
}