Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, T. Sukegawa, G. L. Liu, Z. Liu

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.

本文言語English
論文番号162902
ジャーナルApplied Physics Letters
96
16
DOI
出版ステータスPublished - 2010 4 19
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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