PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY.

Toshio Sakurai, R. J. Culbertson, A. J. Melmed

    研究成果: Article査読

    5 被引用数 (Scopus)

    抄録

    The photoillumination effect which occurs during the field ion microscopy of silicon is investigated in detail using an UHV magnetic-sector atom-probe field ion microscope equipped with a retarding potential energy analyzer. It is shown that the observed enhancement of image intensity and field evaporation rate which occurs upon illumination with red light is due to the presence of an oxide layer. Measurements of energy deficits indicate that (1) the oxide layer causes a large potential drop at the emitter cap and (2) red light illumination drastically reduces or completely eliminates the reduction in potential.

    本文言語English
    ページ(範囲)626-628
    ページ数3
    ジャーナルJournal of vacuum science & technology
    16
    2
    DOI
    出版ステータスPublished - 1979 3

    ASJC Scopus subject areas

    • 工学(全般)

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