Photoemission (XPS and UPS) spectra have been measured for an amorphous GeSe film deposited onto a cooled substrate before and after thermal annealing of the film. The photoemission spectra show a remarkable change in the 4p and the Ge 4s region. A comparison of the experimental results with the recently presented electronic structure calculations reveals that an amorphous GeSe film deposited onto a cooled substrate has a 3-3 coordination character and relaxes into a chemically ordered 4-2 coordinated structure upon thermal annealing.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry