Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond

H. Okazaki, T. Arakane, K. Sugawara, T. Sato, T. Takahashi, T. Wakita, M. Hirai, Y. Muraoka, Y. Takano, S. Ishii, S. Iriyama, H. Kawarada, T. Yokoya

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.

本文言語English
ページ(範囲)582-584
ページ数3
ジャーナルJournal of Physics and Chemistry of Solids
72
5
DOI
出版ステータスPublished - 2011 5月

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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