Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6

Yuji Takakuwa, Yoshiharu Enta, Tetsuji Yamaguchi, Toyokazu Hori, Michio Niwano, Nobuo Miyamoto, Hiroyuki Ishida, Hitoshi Sakamoto, Toshihiko Nishimori, Hiroo Kato

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We have found that the photoelectron intensity of the dimer-dangling-bond- derived surface state on Si(100) shows a periodic oscillation during chemical vapor deposition with Si2H6 gas. The substrate temperature and Si2H6-pressure dependence of the oscillation period was measured. By use of a selective-growth method using SiO2- patterned wafers, one oscillation period was clarified to correspond to the Si growth of one atomic layer of the Si(100) plane with a thickness of 1.36 Å.

本文言語English
ページ(範囲)2013-2015
ページ数3
ジャーナルApplied Physics Letters
64
15
DOI
出版ステータスPublished - 1994 12 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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