X-ray photoelectron diffraction (XPD) and synchrotron radiation photoelectron diffraction (SRPD) have been applied to a Si(001)c(4×4)-C surface in order to determine the site of carbon atoms on the surface. The c(4×4)-C surface, which typically appears during the incubation time of carbonization of Si, was prepared by exposing a single-domain Si(001)2×1 surface at 680°C to C2H4 of 1×10-6 mbar for 600 s. XPD revealed that, except for carbon atoms on the topmost layer, carbon atoms occupy the substitutional sites of Si up to the fourth layer and form a Si1-xCx (x≠0.5) alloy layer. SRPD with a resolution of the chemical-shift C 1s components revealed that the carbon atoms present on the topmost layer occupy random sites and thus are not essential elements of the c(4×4) periodicity.
|ジャーナル||Journal of Electron Spectroscopy and Related Phenomena|
|出版物ステータス||Published - 1999 12 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Physical and Theoretical Chemistry