Phosphorus profile control in Ge by Si delta layers

Y. Yamamoto, P. Zaumseil, R. Kurps, J. Murota, B. Tillack

研究成果: Conference contribution

抄録

The impact of Si delta layer on phosphorus (P) diffusion in germanium (Ge) is investigated. A Ge cap / in-situ P-doped Ge / Ge buffer layer stack is deposited and post-annealed using a single wafer reduced pressure chemical vapor deposition (RPCVD) tool. The P doping level in Ge is ~5×1019 cm-3. In the case of samples without Si delta layer, P diffusion / segregation and desorption from the Ge surface happened during Ge cap layer deposition at 550°C resulting in dopant dose reduction and profile broadening. By interposing the P-doped Ge layer by Si delta layers, the P diffusion is suppressed. The diffused P is piled-up at the position of the Si delta layers. The P diffusion suppression effect by the Si delta layer is observed after postannealing even at 650°C. This effect is pronounced by increasing the Si dose. XRD-reciprocal space mapping shows that the Si delta layer is pseudomorphic to the Ge lattice, indicating that the Si atoms are on lattice site. After postannealing, Si diffusion is observed but no Ge crystal degradation was evident. Enhanced Si diffusion is observed by presence of P. Based on these results, the P diffusion suppression seems to be caused by the replacement of substitutional Si by diffused P.

本文言語English
ホスト出版物のタイトルSiGe, Ge, and Related Compounds 5
ホスト出版物のサブタイトルMaterials, Processing, and Devices
出版社Electrochemical Society Inc.
ページ255-261
ページ数7
9
ISBN(印刷版)9781607683575
DOI
出版ステータスPublished - 2013
外部発表はい
イベント5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
継続期間: 2012 10月 72012 10月 12

出版物シリーズ

名前ECS Transactions
番号9
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
国/地域United States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • 工学(全般)

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