Phase transition from Langmuir-type adsorption to two-dimensional oxide island growth during oxidation on Si(0 0 1) surface

Yuji Takakuwa, Fumiaki Ishida, Takuo Kawawa

研究成果: Article査読

37 被引用数 (Scopus)

抄録

The phase transition from Langmuir-type adsorption to two-dimensional (2D) oxide island growth during initial oxidation on the Si(0 0 1) surface was investigated by real-time Auger electron spectroscopy (AES) combined with reflection high-energy electron diffraction (RHEED). Curve-fitting analysis of the oxygen uptake curve obtained by O-KLL Auger electron intensity revealed that the phase transition occurs steeply at ∼630°C and no oxidation occurs after completion of 2D growth of oxide islands, whereas oxides grows gradually at the interface following Langmuir-type adsorption. It was observed that the very thin oxide layer grown at 616°C is more easily decomposed than that grown at 653°C in spite of almost the same thickness. Furthermore, the RHEED intensity ratio between half-order spots indicated that etching of the surface starts suddenly just at the phase transition temperature of ∼630°C. The steepness of the phase transition, the sudden start of SiO desorption and the difference in the interfacial oxidation and decomposition between two oxidation schemes are comprehensively interpreted using a surface reaction model in which O 2 adsorption on the Si(0 0 1) 2 × 1 surface changes drastically from barrier-less adsorption into dimer backbonds for Langmuir-type adsorption to formation of desorption precursor SiO * in pairs with dimer vacancies for 2D oxide island growth, and coalescence of SiO* leads to nucleation and 2D growth of oxide islands.

本文言語English
ページ(範囲)133-140
ページ数8
ジャーナルApplied Surface Science
216
1-4 SPEC.
DOI
出版ステータスPublished - 2003 6月 30

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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