抄録
In order to propose a phase-operation technique for conduction electrons in solid, we have investigated, using scanning tunneling microscopy, an atomic-scale electron-scattering phenomenon on a 2D subband state formed in Si. Particularly, we have noticed a single surface point-defect around which a standing-wave pattern created, and a dispersion of scattering phase-shifts by the defect-potential against electron-energy has been measured. The behavior is well-explained with appropriate scattering parameters: the potential height and radius. This result experimentally proves that the atomic-scale potential scattering via the point defect enables phase-operation for conduction electrons.
本文言語 | English |
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論文番号 | 111602 |
ジャーナル | Applied Physics Letters |
巻 | 104 |
号 | 11 |
DOI | |
出版ステータス | Published - 2014 3月 17 |
ASJC Scopus subject areas
- 物理学および天文学(その他)