Element substitution effects on the crystal structure and magnetic properties are investigated by substituting Cr atoms for a part of Mn-sites in the Cu2Sb-type MnAlGe. Perpendicularly magnetized (001)-textured films were successfully fabricated onto thermally oxidized silicon substrates without underlayers for the Cr-concentration ranging from 0 to 0.45 in the stoichiometry. The uniaxial magnetic anisotropy energy, K u is enhanced by Cr-substitution, and the maximum value is 7.3 × 106 erg cm-3 at room temperature. The enhancement of K u can be explained by the change of electronic structure due to Cr-substitution, based on the second order perturbation theory with spin-orbit interaction.
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