Perpendicular Magnetic Tunnel Junctions with Low Resistance-Area Product: High Output Voltage and Bias Dependence of Magnetoresistance

N. Tezuka, S. Oikawa, I. Abe, M. Matsuura, S. Sugimoto, K. Nishimura, T. Seino

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We investigate the tunnel magnetoresistance (TMR) effect and its applied bias voltage dependence for perpendicular magnetic tunnel junctions (p-MTJs) with low resistance-area (RA) products of about 10 Ω μm2. We obtain a maximum TMR ratio of 248% among the examined devices. The bias-voltage dependence of the TMR ratio for these junctions is almost the same as that for junctions with RA products of about 10-1000 Ω μ m2 in the positive voltage region, while a fast drop in the TMR ratio is observed in the negative bias region. An output voltage of more than 200 mV is obtained for these p-MTJs.

本文言語English
論文番号7498675
ジャーナルIEEE Magnetics Letters
7
DOI
出版ステータスPublished - 2016

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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