Permittivity enhancement of mechanically strained SrTiO3 MIM capacitor

Shin Ichiro Kuroki, Masayuki Toda, Masaru Umeda, Koji Kotani, Takashi Ito

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO3 film, and titanium-oxygen dipole moment was increased.

本文言語English
ホスト出版物のタイトルECS Transactions - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7
出版社Electrochemical Society Inc.
ページ293-299
ページ数7
3
ISBN(電子版)9781566775694
DOI
出版ステータスPublished - 2007
イベントAnalytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting - Washington, DC, United States
継続期間: 2007 10月 72007 10月 12

出版物シリーズ

名前ECS Transactions
番号3
11
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherAnalytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting
国/地域United States
CityWashington, DC
Period07/10/707/10/12

ASJC Scopus subject areas

  • 工学(全般)

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