TY - JOUR
T1 - Performance of crossed anisotropy multilayered CoZrNb films as IC chip level electromagnetic noise suppressor
AU - Shimada, Yutaka
AU - Ma, Jingyan
AU - Ito, Tetsuo
AU - Yanagi, Kunio
AU - Endo, Yasushi
AU - Muroga, Sho
AU - Yamaguchi, Masahiro
PY - 2014/11/1
Y1 - 2014/11/1
N2 - Co-Zr-Nb multilayers with crossed anisotropy along with multilayers with uniaxial anisotropy were investigated from the standpoint of electromagnetic noise suppressors. Frequency dependences of conduction losses and magnetic near field intensity of a microstrip line (MSL) covered with these multilayers were measured simultaneously. It was found that ferromagnetic resonance excited by RF field from MSL takes a major role of noise suppression over a wide frequency. The ferromagnetic resonance frequency is determined by intrinsic anisotropy field. In addition, shape anisotropy field caused by presence of MSL is negligibly small. The in-plane isotropy feature of noise suppressing performance for the crossed anisotropy films was verified experimentally and numerically.
AB - Co-Zr-Nb multilayers with crossed anisotropy along with multilayers with uniaxial anisotropy were investigated from the standpoint of electromagnetic noise suppressors. Frequency dependences of conduction losses and magnetic near field intensity of a microstrip line (MSL) covered with these multilayers were measured simultaneously. It was found that ferromagnetic resonance excited by RF field from MSL takes a major role of noise suppression over a wide frequency. The ferromagnetic resonance frequency is determined by intrinsic anisotropy field. In addition, shape anisotropy field caused by presence of MSL is negligibly small. The in-plane isotropy feature of noise suppressing performance for the crossed anisotropy films was verified experimentally and numerically.
KW - Co-Zr-Nb
KW - Conductive loss
KW - electromagnetic noise suppressor
KW - ferromagnetic resonance (FMR)
KW - integrated circuit (IC) chip
KW - microstrip line (MSL)
KW - near field
KW - permeability thin film
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U2 - 10.1109/TMAG.2014.2331854
DO - 10.1109/TMAG.2014.2331854
M3 - Article
AN - SCOPUS:84916227498
VL - 50
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 11
M1 - 6971310
ER -