Performance degradation of InGaP solar cells due to 70 keV electron irradiation

Yasuki Okuno, Shuichi Okuda, Takashi Oka, Shirou Kawakita, Mitsuru Imaizumi

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The performance of InGaP solar cells irradiated with electron beams at energies lower than the damage threshold is degraded. To investigate the irradiation effect, GaAs and InGaP solar cells are irradiated with 70 keV electron beams. Measurements of the electroluminescence and external quantum efficiency, in addition to the light current voltage measurement, are conducted. The results show that the performance of the InGaP solar cell, mainly open-circuit voltage, is degraded and affected by nonradiative recombination centers, while the performance of the GaAs solar cell is hardly degraded. The comparison of the experimental results with the prediction from the displacement damage dose model suggests that the nonionizing energy loss of electrons is the main factor for evaluating the degradation of the InGaP cell caused by electron beams in a relatively low energy range.

本文言語English
論文番号081203
ジャーナルJapanese journal of applied physics
56
8
DOI
出版ステータスPublished - 2017 8月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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