Performance and stability of flexible low-voltage organic thin-film transistors based on C 10-DNTT

Ute Zschieschang, Hagen Klauk, Myeong Jin Kang, Kazuo Takimiya, Tsuyoshi Sekitani, Takao Someya, Tobias W. Canzler, Ansgar Werner, Jan Blochwitz-Nimoth

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Using the recently developed organic semiconductor C 10-DNTT and a thin, high-capacitance gate dielectric we have fabricated flexible organic thin-film transistors that combine a field-effect mobility of 4.3 cm 2/Vs, an on/off ratio of 10 8, and a subthreshold swing of 68 mV/decade. To improve the charge exchange between the organic semiconductor layer and the metal source and drain contacts, a thin layer of a non-alkylated organic semiconductor (DNTT) sandwiched between two thin layers of a strong organic dopant (NDP-9) were inserted between the C 10-DNTT and the metal contacts. Flexible ring oscillators have a signal propagation delay of 5 μsec per stage at a supply voltage of 3 V.

本文言語English
ホスト出版物のタイトル2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
DOI
出版ステータスPublished - 2012 5 18
外部発表はい
イベント2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico
継続期間: 2012 3 142012 3 17

出版物シリーズ

名前2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Other

Other2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
CountryMexico
CityPlaya del Carmen
Period12/3/1412/3/17

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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