Pd layer thickness dependence of tunnel magnetoresistance properties in CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers

Kotaro Mizunuma, Michihiko Yamanouchi, Shoji Ikeda, Hideo Sato, Hiroyuki Yamamoto, Hua Dong Gan, Katsuya Miura, Jun Hayakawa, Fumihiro Matsukura, Hideo Ohno

研究成果: Article査読

44 被引用数 (Scopus)

抄録

The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature (Ta) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-T a annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side.

本文言語English
論文番号023002
ジャーナルApplied Physics Express
4
2
DOI
出版ステータスPublished - 2011 2

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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