PBTI for N-type tunnel FinFETs

W. Mizubayashi, T. Mori, K. Fukuda, Y. X. Liu, T. Matsukawa, Y. Ishikawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Morita, S. Migita, H. Ota, M. Masahara

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

This paper reports the positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel field-effect transistors (TFETs) with high-k gate stacks. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the PBTI mechanism for TFETs is almost the same as FinFETs. It was found that by applying a positive bias to the n+-drain, the PBTI lifetime is dramatically improved as compared with that in the conventional stress test. This is because carrier injection from the n+-drain is the main cause of the PBTI, especially for n-type TFETs. Thus, to accurately predict the PBTI lifetime of n-type TFETs, it is necessary to apply a drain bias for the reliability test.

本文言語English
ホスト出版物のタイトル2015 International Conference on IC Design and Technology, ICICDT 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479976690
DOI
出版ステータスPublished - 2015 7 23
外部発表はい
イベントInternational Conference on IC Design and Technology, ICICDT 2015 - Leuven, Belgium
継続期間: 2015 6 12015 6 3

出版物シリーズ

名前2015 International Conference on IC Design and Technology, ICICDT 2015

Other

OtherInternational Conference on IC Design and Technology, ICICDT 2015
国/地域Belgium
CityLeuven
Period15/6/115/6/3

ASJC Scopus subject areas

  • 電子工学および電気工学

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