Paving the way to high-quality indium nitride: The effects of pressurized reactor

Takashi Matsuoka, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertsuk, Ryuji Katayama

研究成果: Conference contribution

7 被引用数 (Scopus)


To promote the research on the growth of high-quality InN films attractive to the application for both optical and electronic devices, the pressurized-reactor metalorganic-vapor-phase epitaxy (PR-MOVPE) system which can overcome the high equilibrium-vapor-pressure of nitrogen between solid and vapor phases is originally developed. In addition to this system, the N-polar growth technique developed in the growth of GaN is introduced. As a result, the dense InN films with atomic steps are successfully grown. From the struggle of the research on high quality InN, the subject of the phase purity is also arisen. The pole figure measurements make the growth condition for a pure InN with a wurtzite structure. The phase purity is almost determined by the growth temperature. These results will pave the way to high-quality InN.

ホスト出版物のタイトルQuantum Sensing and Nanophotonic Devices VIII
出版ステータスPublished - 2011 5月 13
イベントQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
継続期間: 2011 1月 232011 1月 27


名前Proceedings of SPIE - The International Society for Optical Engineering


OtherQuantum Sensing and Nanophotonic Devices VIII
国/地域United States
CitySan Francisco, CA

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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