Paving the way to high-quality indium nitride: The effects of pressurized reactor

Takashi Matsuoka, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertsuk, Ryuji Katayama

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

To promote the research on the growth of high-quality InN films attractive to the application for both optical and electronic devices, the pressurized-reactor metalorganic-vapor-phase epitaxy (PR-MOVPE) system which can overcome the high equilibrium-vapor-pressure of nitrogen between solid and vapor phases is originally developed. In addition to this system, the N-polar growth technique developed in the growth of GaN is introduced. As a result, the dense InN films with atomic steps are successfully grown. From the struggle of the research on high quality InN, the subject of the phase purity is also arisen. The pole figure measurements make the growth condition for a pure InN with a wurtzite structure. The phase purity is almost determined by the growth temperature. These results will pave the way to high-quality InN.

本文言語English
ホスト出版物のタイトルQuantum Sensing and Nanophotonic Devices VIII
DOI
出版ステータスPublished - 2011 5 13
イベントQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
継続期間: 2011 1 232011 1 27

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
7945
ISSN(印刷版)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices VIII
CountryUnited States
CitySan Francisco, CA
Period11/1/2311/1/27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

フィンガープリント 「Paving the way to high-quality indium nitride: The effects of pressurized reactor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル