Pauli-spin-blockade transport through a silicon double quantum dot

Hongwu Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, Y. Hirayama

研究成果: Article査読

115 被引用数 (Scopus)

抄録

We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.

本文言語English
論文番号073310
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
77
7
DOI
出版ステータスPublished - 2008 2 22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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