@article{69bdd461d2f34ab3b76671dbe044ab3a,
title = "Patch antenna coupled 0.2 THz TUNNETT oscillators",
abstract = "Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 × 440 μm patch antenna was coupled with the GaAs TUNNETT diode for cavity-less sub-terahertz (THz) oscillators. The obtained sub-terahertz continuous wave (CW) was 177-197 GHz with a detected power of -35.3 dBm at 197 GHz under a bias current of 550 mA.",
keywords = "Molecular layer epitaxy (MLE), Patch antenna, TUNNETT, Terahertz",
author = "Sundararajan Balasekaran and Kazuomi Endo and Tadao Tanabe and Yutaka Oyama",
note = "Funding Information: This work was partially supported by Global COE program “Materials Integration (International Center of Education and Research), Tohoku University”, MEXT, Japan. We are grateful to Dr. P. Plotka of the Semiconductor Research Institute for fruitful discussions on antenna design and device processing and Mr. H. Makabe for help with fabrication process. We also wish to thank Prof. J. Nishizawa for his fruitful discussions on TUNNETT device principles.",
year = "2010",
month = dec,
doi = "10.1016/j.sse.2010.07.006",
language = "English",
volume = "54",
pages = "1578--1581",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "12",
}