Parity effect of bipolar quantum Hall edge transport around graphene antidots

Sadashige Matsuo, Shu Nakaharai, Katsuyoshi Komatsu, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, Kensuke Kobayashi

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Parity effect, which means that even-odd property of an integer physical parameter results in an essential difference, ubiquitously appears and enables us to grasp its physical essence as the microscopic mechanism is less significant in coarse graining. Here we report a new parity effect of quantum Hall edge transport in graphene antidot devices with pn junctions (PNJs). We found and experimentally verified that the bipolar quantum Hall edge transport is drastically affected by the parity of the number of PNJs. This parity effect is universal in bipolar quantum Hall edge transport of not only graphene but also massless Dirac electron systems. These results offer a promising way to design electron interferometers in graphene.

本文言語English
論文番号11723
ジャーナルScientific reports
5
DOI
出版ステータスPublished - 2015 6月 30
外部発表はい

ASJC Scopus subject areas

  • 一般

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