TY - JOUR
T1 - Parasitic effects and long term stability of InP-based HEMTs
AU - Meneghesso, G.
AU - Luise, R.
AU - Buttari, D.
AU - Chini, A.
AU - Yokoyama, H.
AU - Suemitsu, T.
AU - Zanoni, E.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gm(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, gm(f) dispersion).
AB - A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gm(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, gm(f) dispersion).
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U2 - 10.1016/S0026-2714(00)00168-2
DO - 10.1016/S0026-2714(00)00168-2
M3 - Article
AN - SCOPUS:0000659981
SN - 0026-2714
VL - 40
SP - 1715
EP - 1720
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 8-10
ER -