TY - GEN
T1 - P-33
T2 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
AU - Koike, Junichi
AU - Hirota, Kazuhiko
AU - Naito, Mayumi
AU - Yun, Pilsang
AU - Sutou, Yuji
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Cu-Mn alloy was used for electrode materials for amorphous Si TFT. The gate electrode showed a good adhesion to glass and low resistivity. The source/drain electrodes showed a good diffusion barrier property, Ohmic contact and a low contact resistivity. TFT structure showed the ON/OFF ratio of better than 106.
AB - Cu-Mn alloy was used for electrode materials for amorphous Si TFT. The gate electrode showed a good adhesion to glass and low resistivity. The source/drain electrodes showed a good diffusion barrier property, Ohmic contact and a low contact resistivity. TFT structure showed the ON/OFF ratio of better than 106.
UR - http://www.scopus.com/inward/record.url?scp=80755187523&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80755187523&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:80755187523
SN - 9781618390950
T3 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
SP - 1343
EP - 1346
BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Y2 - 23 May 2010 through 28 May 2010
ER -