P-33: Cu-Mn electrodes for a-Si TFT and its electrical characteristics

Junichi Koike, Kazuhiko Hirota, Mayumi Naito, Pilsang Yun, Yuji Sutou

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Cu-Mn alloy was used for electrode materials for amorphous Si TFT. The gate electrode showed a good adhesion to glass and low resistivity. The source/drain electrodes showed a good diffusion barrier property, Ohmic contact and a low contact resistivity. TFT structure showed the ON/OFF ratio of better than 106.

本文言語English
ホスト出版物のタイトル48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
ページ1343-1346
ページ数4
出版ステータスPublished - 2010 12月 1
イベント48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
継続期間: 2010 5月 232010 5月 28

出版物シリーズ

名前48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
3

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
国/地域United States
CitySeattle, WA
Period10/5/2310/5/28

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 情報システム

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