Oxygen pipe diffusion in sapphire basal dislocation

Tsubasa Nakagawa, Atsutomo Nakamura, Isao Sakaguchi, Naoya Shibata, K. Peter D. Lagerlöf, Takahisa Yamamoto, Hajime Haneda, Yuichi Ikuhara

研究成果: Article査読

39 被引用数 (Scopus)

抄録

The oxygen self-diffusion behavior in deformed sapphire single crystals (α-Al2O3) sapphire) with a high density of unidirectional basal dislocations was examined in the temperature range of 1424-1636°C using 18O isotopes and secondary ion mass spectrometry-depth profiling techniques. The pipe and lattice diffusion kinetics were best described by r2Dp = 4.6 × 10 -20 exp (-4.8[eV]/kT) [m4/s] and D1 = 2.9× 10-1 exp (-5.5[eV]/kT) [m2/s], respectively. Both the magnitude of pre-exponential factor and activation energy for oxygen pipe diffusion were in good agreement with that of indirect measurements of pipe diffusion deduced from the annihilation of dislocation dipoles. The measured bulk diffusion coefficient is also in good agreement with previously reported data having activation energies ranged between 5.5-6.1 eV.

本文言語English
ページ(範囲)1013-1017
ページ数5
ジャーナルJournal of the Ceramic Society of Japan
114
1335
DOI
出版ステータスPublished - 2006 11月
外部発表はい

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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