Oxygen doped Ge crystals Czochralski-grown from the B2O 3-fully-covered melt

Toshinori Taishi, Hideaki Ise, Yu Murao, Takayuki Ohsawa, Yuki Tokumoto, Yutaka Ohno, Ichiro Yonenaga

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Local vibrations of oxygen in Ge crystals grown from a melt fully covered by B2O3 were evaluated by Fourier-transform infrared spectroscopy. Ge single crystals containing oxygen were grown by the Czochralski method under various growth conditions. Oxygen concentrations in the crystals were determined to be in the range between 8.5 × 1015 and 5.5 × 1017 cm-3 from the infrared absorption at 855 cm-1 originating in local vibration of Ge-Oi-Ge quasi-molecules. Absorption peaks relating to GeOx, SiOx and Si-Oi-Si were not detected in the as-grown crystals. The calibration coefficient for determining oxygen concentration in Ge crystals from the absorption peak intensity at 1264 cm-1 was estimated to be 1.15 × 1019 cm-2.

本文言語English
ページ(範囲)496-498
ページ数3
ジャーナルMicroelectronic Engineering
88
4
DOI
出版ステータスPublished - 2011 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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