Oxygen donors developed around dislocations in silicon

Masamitsu Koguchi, Ichiro Yonenag, Koji Sumino

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Plastic deformation of Czochralski silicon crystals at elevated temperature produces both acceptors and donors simultaneously. The former are ascribed to dislocations and the latter to the oxygen atmospheres around dislocations. The energy levels of the deformation-induced donors are determined by Hall measurements. The oxygen atmospheres are found to be very stable and not to easily transform to precipitates of cristobalite by annealing at 900 °C.

本文言語English
ページ(範囲)L411-L413
ジャーナルJapanese journal of applied physics
21
7
DOI
出版ステータスPublished - 1982 7月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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