Oxygen concentration dependence of silicon oxide dynamical properties

Yuji Yajima, Kenji Shiraishi, Tetsuo Endoh, Hiroyuki Kageshima

研究成果: Article査読

1 被引用数 (Scopus)

抄録

To understand oxidation in three-dimensional silicon, dynamic characteristics of a SiOx system with various stoichiometries were investigated. The calculated results show that the self-diffusion coefficient increases as oxygen density decreases, and the increase is large when the temperature is low. It also shows that the self-diffusion coefficient saturates, when the number of removed oxygen atoms is sufficiently large. Then, approximate analytical equations are derived from the calculated results, and the previously reported expression is confirmed in the extremely low-SiO-density range.

本文言語English
論文番号06KD01
ジャーナルJapanese journal of applied physics
57
6
DOI
出版ステータスPublished - 2018 6

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Oxygen concentration dependence of silicon oxide dynamical properties」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル