Oxidation-induced stacking faults introduced by using a cavitating jet for gettering in silicon

H. Soyama, H. Kumano

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Oxidation-induced stacking faults (OSF) were successfully introduced by cavitation impacts followed by heat-treatment on the surface of a silicon wafer. Cavitation impacts caused by a cavitating jet were used, because the intensity of the cavitation impacts can easily be controlled by adjusting the injection pressure and the distance from the nozzle to the impinging surface. It is well known that OSF, produced after mechanical back-side damage from shot blasting, are effective as gettering sites. Silicon wafers exposed to cavitation impact were heat-treated to grow OSF. The existence of OSF shows that a cavitating jet can be used to introduce back-side damage for gettering.

本文言語English
ページ(範囲)93-94
ページ数2
ジャーナルElectrochemical and Solid-State Letters
3
2
DOI
出版ステータスPublished - 2000 2 1

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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