Oscillatory relaxation of surface photovoltage on a silicon surface

M. Ogawa, S. Yamamoto, R. Yukawa, R. Hobara, C. H. Lin, R. Y. Liu, S. J. Tang, I. Matsuda

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Time-resolved measurement of photoemission spectroscopy was made to trace a change of surface potential after the surface photovoltage effect on a Si(111) 7×7 surface. Two relaxation processes were found with decay times of nanoseconds and hundreds of nanoseconds, which are explained in terms of the tunneling and the thermionic relaxation schemes, respectively. At the high laser power density, the relaxation has become oscillatory with a temporal period of several tens of nanoseconds.

本文言語English
論文番号235308
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
87
23
DOI
出版ステータスPublished - 2013 6 17
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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