Origin of low-frequency noise in pentacene field-effect transistors

Yong Xu, Takeo Minari, Kazuhito Tsukagoshi, Jan Chroboczek, Francis Balestra, Gerard Ghibaudo

研究成果: Article査読

35 被引用数 (Scopus)

抄録

Measurements of power spectral density (PSD) of low-frequency noise (LFN) in pentacene field-effect transistors reveal the preponderance of a 1/f-type PSD behavior with the amplitude varying as the squared transistor gain and increasing as the inverse of the gate surface area. Such features impose an interpretation of LFN by carrier number fluctuations model involving capture/release of charges on traps uniformly distributed over the gate surface. The surface slow trap density extracted by the noise analysis is close to the surface states density deduced independently from static I(V) data, which confirms the validity of the proposed LFN interpretation. Further, we found that the trap densities in bottom-contact (BC) devices were higher than in their top-contact (TC) counterparts, in agreement with observations of a poorer crystal structure of BC devices, in the contact regions in particular. At the highest bias the noise originating from the contact resistance is also shown to be a dominant component in the PSD, and it is well explained by the noise originating from a gate-voltage dependent contact resistance. A gate area scaling was also performed, and the good scaling and the dispersion at the highest bias confirm the validity of the applied carrier number fluctuations model and the predominant contact noise at high current intensities.

本文言語English
ページ(範囲)106-110
ページ数5
ジャーナルSolid-State Electronics
61
1
DOI
出版ステータスPublished - 2011 7
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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