Origin of forward leakage current in GaN-based light-emitting devices

S. W. Lee; D. C. Oh; H. Goto; J. S. Ha; H. J. Lee; T. Hanada; M. W. Cho; T. Yao; S. K. Hong; H. Y. Lee; S. R. Cho; J. W. Choi; J. H. Choi; J. H. Jang; J. E. Shin; J. S. Lee

doi:10.1063/1.2357930

Origin of forward leakage current in GaN-based light-emitting devices

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee

金属材料研究所・材料設計研究部

研究成果: Article › 査読

154 被引用数 (Scopus)

抄録

The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2 μm) with high dislocation density [low (10⁹ cm ^-2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (∼20 μm) with comparatively low dislocation density [high (10⁸ cm^-2)] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.

本文言語	English
論文番号	132117
ジャーナル	Applied Physics Letters
巻	89
号	13
DOI	https://doi.org/10.1063/1.2357930
出版ステータス	Published - 2006

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.2357930

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引用スタイル

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title = "Origin of forward leakage current in GaN-based light-emitting devices",

abstract = "The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2 μm) with high dislocation density [low (109 cm -2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (∼20 μm) with comparatively low dislocation density [high (108 cm-2)] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.",

author = "Lee, {S. W.} and Oh, {D. C.} and H. Goto and Ha, {J. S.} and Lee, {H. J.} and T. Hanada and Cho, {M. W.} and T. Yao and Hong, {S. K.} and Lee, {H. Y.} and Cho, {S. R.} and Choi, {J. W.} and Choi, {J. H.} and Jang, {J. H.} and Shin, {J. E.} and Lee, {J. S.}",

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doi = "10.1063/1.2357930",

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volume = "89",

journal = "Applied Physics Letters",

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T1 - Origin of forward leakage current in GaN-based light-emitting devices

AU - Lee, S. W.

AU - Oh, D. C.

AU - Goto, H.

AU - Ha, J. S.

AU - Lee, H. J.

AU - Hanada, T.

AU - Cho, M. W.

AU - Yao, T.

AU - Hong, S. K.

AU - Lee, H. Y.

AU - Cho, S. R.

AU - Choi, J. W.

AU - Choi, J. H.

AU - Jang, J. H.

AU - Shin, J. E.

AU - Lee, J. S.

PY - 2006

Y1 - 2006

N2 - The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2 μm) with high dislocation density [low (109 cm -2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (∼20 μm) with comparatively low dislocation density [high (108 cm-2)] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.

AB - The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2 μm) with high dislocation density [low (109 cm -2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (∼20 μm) with comparatively low dislocation density [high (108 cm-2)] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.

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Origin of forward leakage current in GaN-based light-emitting devices

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