Origin of forward leakage current in GaN-based light-emitting devices

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee

研究成果: Article査読

154 被引用数 (Scopus)

抄録

The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2 μm) with high dislocation density [low (109 cm -2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (∼20 μm) with comparatively low dislocation density [high (108 cm-2)] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.

本文言語English
論文番号132117
ジャーナルApplied Physics Letters
89
13
DOI
出版ステータスPublished - 2006

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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